Data Sheet

FDA38N30 — N-Channel UniFET
TM
MOSFET
©2011 Fairchild Semiconductor Corporation
FDA38N30 Rev. C2
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes:
1. 250
μs Pulse Test
2. T
C
= 25
o
C
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
24681012
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
* Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
0 25 50 75 100 125
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.13
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
R
DS(ON)
[Ω],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10
0
10
1
10
2
150
o
C
* Notes:
1. V
GS
= 0V
2. 250
μs Pulse Test
25
o
C
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
2000
4000
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitances [pF]
V
DS
, Drain-Source Voltage [V]
0 102030405060
0
2
4
6
8
10
12
V
DS
= 150V
V
DS
= 60V
V
DS
= 240V
? Note : I
D
= 38A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]