Data Sheet

FDA38N30 — N-Channel UniFET
TM
MOSFET
©2011 Fairchild Semiconductor Corporation
FDA38N30 Rev. C2
www.fairchildsemi.com
2
Package Marking and Ordering Infomation
Electrical Characteristics T
C
= 25°C unless otherwise noted.
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.7 mH, I
AS
= 38 A, V
DD
= 50 V, R
G
= 25 Ω, starting T
J
= 25°C.
3. I
SD
≤ 38 A, di/dt ≤ 200 A/μs, V
DD
≤ BV
DSS
, starting T
J
= 25°C.
4. Essentially independent of operating temperature typical characteristics.
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDA38N30
FDA38N30 TO-3PN Tube N/A N/A 30 units
Symbol Parameter Conditions Min. Typ. Max Unit
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V, T
C
= 25
o
C 300 - - V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to 25°C-0.3-V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 300 V, V
GS
= 0 V
--1
μA
V
DS
= 240 V, T
C
= 125
o
C
--10
I
GSS
Gate-Body Leakage Current
V
GS
= ±30 V, V
DS
= 0 V
--
±100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 μA 3.0 - 5.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 19 A
-
0.070 0.085 Ω
g
FS
Forward Transconductance V
DS
= 20 V, I
D
= 19 A - 6.3 - S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
- 2600 - pF
C
oss
Output Capacitance - 500 - pF
C
rss
Reverse Transfer Capacitance - 60 - pF
Q
g(tot)
Total Gate Charge at 10V
V
DS
= 240 V, I
D
= 38 A,
V
GS
= 10 V
(Note 4)
-60-nC
Q
gs
Gate to Source Gate Charge
-17-nC
Q
gd
Gate to Drain “Miller” Charge
-28-nC
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 150 V, I
D
= 38 A,
R
G
= 25 Ω, V
GS
= 10 V
(Note 4)
-5369ns
t
r
Turn-On Rise Time - 110 143 ns
t
d(off)
Turn-Off Delay Time - 118 153 ns
t
f
Turn-Off Fall Time - 54 70 ns
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current - - 38 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current - - 150 A
V
SD
Drain to Source Diode Forward Voltage V
GS
= 0 V, I
SD
= 38 A - - 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
SD
= 38 A,
dI
F
/dt = 100 A/μs
- 315 - ns
Q
rr
Reverse Recovery Charge - 4.0 - μC