Data Sheet

FDA24N40F — N-Channel UniFET
TM
FRFET
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FDA24N40F Rev. C2
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. Maximum Safe Operating Area
vs. Temperature
Figure 9. Maximum Drain Current
vs. Case Temperature
Figure 10. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 250μA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
110100
0.01
0.1
1
10
100
200
30μs
100μs
1ms
10ms
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
800
DC
25 50 75 100 125 150
0
5
10
15
20
25
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1E-3
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θJC
(t) = 0.53
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
0.5
Single pulse
Thermal Response [Z
θJC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
Z
θJC
(t), Thermal Response [
o
C/W]
t
1
, Rectangular Pulse Duration [sec]