Data Sheet

FDA24N40F — N-Channel UniFET
TM
FRFET
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FDA24N40F Rev. C2
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 10
0.1
1
10
15
70
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25
o
C
V
GS
= 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
V
DS
,Drain-Source Voltage[V]
0.02
45678
1
10
100
150
o
C
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25
o
C
I
D
,Drain Current[A]
V
GS
,Gate-Source Voltage[V]
0.0 0.4 0.8 1.2 1.6
1
10
100
*Notes:
1. V
GS
= 0V
2. 250
μs Pulse Test
150
o
C
I
S
, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
25
o
C
200
0 20406080
0.12
0.16
0.20
0.24
0.28
0.32
0.36
*Note: T
J
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.1 1 10
0
1000
2000
3000
4000
5000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
V
DS
, Drain-Source Voltage [V]
30
0 1020304050
0
2
4
6
8
10
*Note: I
D
= 23A
V
DS
= 100V
V
DS
= 200V
V
DS
= 320V
V
GS
, Gate-Source Voltage [V]
Q
g
, Total Gate Charge [nC]