Data Sheet

FCP11N60N / FCPF11N60NT — N-Channel SupreMOS
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FCP11N60N / FCPF11N60NT Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25
o
C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FCP11N60N FCP11N60N TO-220 Tube N/A N/A 50 units
FCPF11N60NT FCPF11N60NT TO-220F Tube N/A N/A 50 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
DSS
Drain to Source Breakdown Voltage I
D
= 1 mA, V
GS
= 0 V, T
C
= 25
o
C 600 - - V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 1 mA, Referenced to 25
o
C - 0.73 - V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 480 V, V
GS
= 0 V - - 10
μA
V
DS
= 480 V, V
GS
= 0 V, T
C
= 125
o
C - - 100
I
GSS
Gate to Body Leakage Current V
GS
= ±30 V, V
DS
= 0 V - - ±100 nA
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA2.0-4.0V
R
DS(on)
Static Drain to Source On Resistance V
GS
= 10 V, I
D
= 5.4 A - 0.255 0.299 Ω
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 5.4 A - 13.5 - S
C
iss
Input Capacitance
V
DS
= 100 V, V
GS
= 0 V,
f = 1 MHz
- 1130 1505 pF
C
oss
Output Capacitance - 45 60 pF
C
rss
Reverse Transfer Capacitance - 3 5 pF
C
oss
Output Capacitance V
DS
= 380 V, V
GS
= 0 V, f = 1 MHz - 25 - pF
C
oss(eff.)
Effective Output Capacitance V
DS
= 0 V to 480 V, V
GS
= 0 V - 130 - pF
Q
g(tot)
Total Gate Charge at 10V
V
DS
= 380 V, I
D
= 5.4 A,
V
GS
= 10 V
(Note 4)
- 27.4 35.6 nC
Q
gs
Gate to Source Gate Charge - 4.9 - nC
Q
gd
Gate to Drain “Miller” Charge - 8.8 - nC
ESR Equivalent Series Resistance (G-S) f = 1 MHz - 2.0 - Ω
t
d(on)
Turn-On Delay Time
V
DD
= 380 V, I
D
= 5.4 A,
V
GS
= 10 V, R
G
= 4.7 Ω
(Note 4)
- 13.6 37.2 ns
t
r
Turn-On Rise Time - 9.1 28.2 ns
t
d(off)
Turn-Off Delay Time - 42.0 94.0 ns
t
f
Turn-Off Fall Time - 10.0 30.0 ns
I
S
Maximum Continuous Drain to Source Diode Forward Current - - 10.8 A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current - - 32.4 A
V
SD
Drain to Source Diode Forward Voltage V
GS
= 0 V, I
SD
= 5.4 A - - 1.2 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 5.4 A,
dI
F
/dt = 100 A/μs
- 268 - ns
Q
rr
Reverse Recovery Charge - 3.1 - μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I
AS
= 3.7 A, R
G
= 25 Ω, starting T
J
= 25°C.
3. I
SD
≤ 10.8 A, di/dt ≤ 200 A/μs, V
DD
= 380 V, starting T
J
= 25°C.
4. Essentially independent of operating temperature typical characteristics.