Data Sheet

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN7888 • Rev.1.5 6
FAN7888 — 3 Half-Bridge Gate-Drive IC
Dynamic Electrical Characteristics
T
A
=25C, V
BIAS
(V
DD
, V
BS1,2,3
)=15.0 V, V
S1,2,3
=GND, C
Load
=1000 pF unless otherwise specified.
Symbol Parameter Conditions Min. Typ. Max. Unit
t
ON
Turn-on Propagation Delay V
S1,2,3
=0 V 130 220 ns
t
OFF
Turn-off Propagation Delay V
S1,2,3
=0 V 150 240 ns
t
R
Turn-on Rise Time 50 120 ns
t
F
Turn-off Fall Time 30 80 ns
MT1 Turn-on Delay Matching I t
ON(H)
-t
OFF(L)
I 50 ns
MT2 Turn-off Delay Matching I t
OFF(H)
-t
ON(L)
I 50 ns
DT Dead Time 100 270 440 ns
MDT Dead-time Matching I t
DT1
-t
DT2
I 60 ns