Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsPMICsPMIC - gate drivers Non-inverting High side, Low side, Sychronous SOP 8

Publication Order Number:

FAN7190-F085/D

FAN7190-F085 - High-Current, High & Low Side, Gate-Drive IC

September-2017, Rev. 2

FAN7190-F085

High-Current, High & Low-Side, Gate-Drive IC

Features

 Floating Channels for Bootstrap Operation to +600V

 Typically 4.5A/4.5A Sourcing/Sinking Current Driving

Capability

 Common-Mode dv/dt Noise Canceling Circuit

 Built-in Under-Voltage Lockout for Both Channels

 Matched Propagation Delay for Both Channels

 3.3V and 5V Input Logic Compatible

 Output In-phase with Input

Applications

 Diesel and gasoline Injectors/Valves

 MOSFET-and IGBT high side driver applications

Description

The FAN7190-F085 is a monolithic high- and low-side

gate-drive IC, which can drive high speed MOSFETs and

IGBTs that operate up to +600V. It has a buffered output

stage with all NMOS transistors designed for high pulse

current driving capability and minimum cross-conduction.

ON Semiconductor’s high-voltage process and

common-mode noise canceling techniques provide

stable operation of the high-side driver under high dv/dt

noise circumstances. An advanced level shift circuit offers

high-side gate driver

operation up to V

=-9.8V (typical) for V

=15V.

The UVLO circuit prevents malfunction when V

and

are lower than the specified threshold voltage.

The high current and low output voltage drop feature

make this device suitable for magnetic- and piezo type

injectors and general MOSFET/IGBT based high side

driver applications.

Ordering Information

Part Number Package

Operating

Temperature Range

Eco Status Packing Method

FAN7190M-F085

8-SOP -40C ~ 125CRoHS

Tube

FAN7190MX-F085

Tape & Reel

Notes:

1. These devices passed wave soldering test by JESD22A-111.

2. A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON

Semiconductor has officially announced in Aug 2014.

Summary of content (12 pages)

PAGE 1
Description Features  Floating Channels for Bootstrap Operation to +600V  Typically 4.5A/4.5A Sourcing/Sinking Current Driving Capability  Common-Mode dv/dt Noise Canceling Circuit  Built-in Under-Voltage Lockout for Both Channels  Matched Propagation Delay for Both Channels  3.3V and 5V Input Logic Compatible  Output In-phase with Input The FAN7190-F085 is a monolithic high- and low-side gate-drive IC, which can drive high speed MOSFETs and IGBTs that operate up to +600V.
PAGE 2
15V FAN7190-F085 RBOOT Up to 600V DBOOT HIN 1 HIN VB 8 LIN 2 LIN HO 7 Controller Q1 R1 CBOOT 3 COM VS 4 LO VDD 5 R2 6 OUTPUT Load C1 R3 Q2 R4 FAN7190-F085 Rev.01 Figure 1. Application Circuit for Half-Bridge Internal Block Diagram FAN7190-F085 8 VB 7 HO 6 VS 5 VDD 4 LO 3 COM UVLO 200K NOISE CANCELLER R DRIVER 1 PULSE GENERATOR HIN R S Q UVLO DELAY 2 VSS/COM LEVEL SHIFT DRIVER LIN 200K FAN7190-F085 Rev. 01 Figure 2. Functional Block Diagram www.
PAGE 3
FAN7190M-F085 FAN7190MX-F085 HIN 1 LIN 2 8 VB 7 HO FAN7190-F085 COM 3 6 VS LO 4 5 VDD FAN7190-F085 Rev.01 Figure 3.
PAGE 4
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. -40C <=TA<= 125C, unless otherwise specified.
PAGE 5
VBIAS (VDD, VBS)=15.0V, VS=COM, -40C <=TA<= 125C, unless otherwise specified. The VIL, VIH, and IIN parameters are referenced to COM and are applicable to the respective input signals HIN and LIN. The VO and IO parameters are referenced to COM and VS is applicable to the respective output signals HO and LO. Symbol Characteristics Test Condition Min. Typ. Max. Unit POWER SUPPLY SECTION (VDD AND VBS) VDDUV+ VBSUV+ VDD and VBS Supply Under-Voltage Positive-going Threshold 7.8 8.8 9.
PAGE 6
300 250 250 Turn-off Delay Time(ns) Turn-on Delay Time(ns) 300 200 Max. 150 Typ. 100 50 0 -50 -25 0 25 50 75 100 200 Max. Typ. 150 100 50 0 -50 125 -25 0 o 50 75 100 125 Temperature( C) Figure 4. Turn-on Propagation Delay vs. Temperature Figure 5. Turn-off Propagation Delay vs. Temperature 80 80 60 Turn-Off Fall Time(ns) Turn-on Rise Time(ns) 25 o Temperature( C) Max. 40 Typ. 20 60 40 Max. 20 Typ.
PAGE 7
150 160 Quiescent VBS Supply Cureent (uA) Quiescent VDD Supply Current (uA) 200 Max. 120 Typ. 80 40 0 -50 -25 0 25 50 75 100 120 Max. 90 60 Typ. 30 0 -50 125 -25 0 25 o 50 75 100 125 o Temperature ( C) Temperature ( C) Figure 10. Quiescent VDD Supply Current vs. Temperature Figure 11. Quiescent VBS Supply Current vs. Temperature 1000 800 Operating VBS Supply Current (uA) Operating VDD Supply Current (uA) 1000 Max. 600 Typ.
PAGE 8
10 VBS negative going UVLO threshold (V) VBS positive going UVLO threshold (V) 11 Max 9 Typ 8 Min 7 -50 -25 0 25 50 75 100 10 Max 9 Typ 8 7 Min 6 -50 125 -25 0 o 75 100 Figure 17. VBS UVLO- vs. Temperature 2.0 40 1.6 Low Level Output Voltage (mV) High Level Output Voltage (V) 50 Max. 1.2 Typ 0.8 0.4 -25 0 25 50 75 100 Max. 30 20 10 Typ 0 -50 125 -25 0 o 75 100 125 Figure 19. Low-Level Output Voltage vs. Temperature 3.
PAGE 9
50 -6 Allowable negative Vs voltage (V) High input bias current (A) 60 Max. 40 Typ. 30 20 10 0 -50 -25 0 25 50 75 100 -7 -8 -9 -10 Typ. -11 -12 -50 125 o -25 0 25 50 75 100 o Temperature( C) Figure 22. Logic Input High Bias Current vs. Temperature Min Temp( C) Figure 23. Allowable Negative VS Voltage vs. Temperature www.onsemi.
PAGE 10
15V HIN 1 HIN VB 8 LIN 2 LIN HO 7 10µF 100nF 1nF 3 COM 4 LO VS 6 15V VDD 5 1nF 10µF 100nF FAN7190 Figure 24. Switching Time Test Circuit (Referenced 8-SOP) HIN LIN HO LO FAN7190 Rev.01 Figure 25. Input/Output Timing Diagram HIN 50% 50% LIN ton tr toff 90% tf 90% HO LO 10% 10% FAN7190 Figure 26. Switching Time Waveform Definitions HIN LIN 50% LO 10% 50% MT HO 10% 90% LO 90% HO MT FAN7190 Figure 27. Delay Matching Waveform Definitions www.onsemi.
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FAN7190-F085 - High-Current, High & Low Side, Gate-Drive IC www.onsemi.
PAGE 12
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.