Data Sheet

FAN7093_F085
High Current PN Half Bridge
December 2011
integrated diodes.
The on state resistance R
ds(on)
is dependent on the supply voltage VBATT as well as on the junction
temperature T
j
.
7.1 Power Stages - Static Characteristics
VBATT = 7 V to 18 V, T
j
= -40 °C to +150 °C, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
High Side Switch - Static Characteristics
Pos. Parameter Symbol Min. Typ. Max. Unit Conditions
7.1.1 ON State High Side
Resistance
5)
I
OUT
= -20 A; VBATT = 14 V
R
DS(ON)
HS
12.3
mΩ
FAN7093_F085B (TO-263-7L,
D
2
PAK)
7.1.2 Leakage Current I
Leak(HS)
50.0 µA V
INH
= 0 V; V
OUT
= 0 V
7.1
.3
Reverse Diode Forward
-
Voltage
6)
1.5
V
I
OUT
=
-
9 A
Low Side Switch - Static Characteristics
Pos. Parameter Symbol Min. Typ. Max. Unit Conditions
7.1.4 ON State Low Side Resistance
5
)
I
OUT
= 20 A; VBATT = 14 V
R
DS(ON) LS
18.2
mΩ
FAN7093_F085B
7.1.5
Leakage Current
I
Leak(LS)
10.0
µA
V
INH
= 0 V;
V
OUT
=
VBATT
7.1
.
6
Reverse Diode Forward
-
Voltage
6
)
-
1.5
V
I
OUT
= 9 A
5) Specified R
ds(on)
value is related to normal soldering points; Rds(on) values is specified for FAN7093_F085B : pin 1,7 to pin 8
(tab, backside) and for FAN7093_F085P/FAN7093_F085S : pin 1,7 to pin4
6) Due to active freewheeling, diode is conducting only for a few µs, depending on R
SR
FAN7093_F085 Rev. C1 www.fairchildsemi.com7