Data Sheet

www.onsemi.com
3
FAN7081-GF085 High Side Gate Driver
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are abso-
lute voltages referenced to COM.
Parameter Symbol Min. Max. Unit
High side floating supply offset voltage VS VB-25 VB+0.3 V
High side floating supply voltage V
B -0.3 625 V
High side floating output voltage V
HO Vs-0.3 VB+0.3 V
Supply voltage V
CC -0.3 25 V
Input voltage for I
N VIN -0.3 Vcc+0.3 V
Power Dissipation
1)
Pd 0.625 W
Thermal resistance, junction to ambient
1)
Rthja 200 C/W
Electrostatic discharge voltage
(Human Body Model)
V
ESD
1K V
Charge device model V
CDM
500 V
Junction Temperature Tj 150 C
Storage Temperature T
S
-55 150 C
Note: 1) The thermal resistance and power dissipation rating are measured bellow conditions;
JESD51-2: Integrated Circuit Thermal Test Method Environmental Conditions - Natural codition(StillAir)
JESD51-3: Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package
Recommended Operating Conditions
Parameter Symbol Min. Max. Unit
High side floating supply voltage(DC)
Transient:-10V@ 0.2 us
VB VS + 10 Vs + 20 V
High side floating supply offset voltage(DC) V
S -4 (@VBS >= 10V)
-5 (@VBS >= 11.5V)
600 V
High side floating supply offset voltage(
Tran-
sient
)
V
S -25 (~200ns)
-20(200ns ~240ns)
-7(240ns~400ns)
600 V
High side floating output voltage V
HO VS VB V
Allowable offset voltage Slew Rate
1)
dv/dt - 50 V/ns
Supply voltage V
CC 10 20 V
Input voltage for
IN VIN 0 Vcc V
Switching Frequency
2)
Fs 200 KHz
Minimum Pulse Width
(3)
T
pulse
85 - ns
Ambient Temperature Ta -40 125 C
For proper operations the device should be used within the recommended conditions. -40°C <= Ta
<= 125°C
Note: 1) Guaranteed by design.
2) Duty = 0.5
3) Guaranteed by design. Refer to Figure4a,4b and 4c on Page 8.