Data Sheet

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
EGP10A - EGP10K Rev. A
EGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency Rectifiers
July 2007
EGP10A - EGP10K
1.0 Ampere Glass Passivated High Efficiency Rectifiers
Features
• Superfast recovery time for high efficiency
• Low forward voltage, high current capability
• Low leakage current
• High surge current capability
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T
a
= 25°C unless otherwise noted
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Value Units
I
O
Average Rectified Current
.375 " lead length @ TL = 75°C
1.0 A
i
f(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
30 A
P
D
Total Device Dissipation
Derate above 25°C
2.5
17
W
mW°C
I
C
Thermal Resistance, Junction to Ambient 50 °C/W
T
J
, T
STG
Junction and Storage Temperature Range -65 ~ 150 °C
Parameter
Device
Units
10A 10B 10C 10D 10F 10G 10J 10K
Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR) 50 100 150 200 300 400 600 800 V
Maximum Reverse Current
@ rated V
R TA = 25°C
T
A = 125°C
5.0
100
μA
μA
Maximum Reverse Recovery Time
I
F = 0.5 A, IR = 1.0 A, Irr = 0.25 A
50 75 nS
Maximum Forward Voltage @ 1.0 A 0.95 1.25 1.7 V
Typical Junction Capacitance
V
R = 4.0 V, f = 1.0 MHz
22 15 pF
DO-41 Glass case
COLOR BAND DENOTES CATHODE