Data Sheet

©2002 Fairchild Semiconductor Corporation Rev. A, February 2002
D45H2A
1
TO-220
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 30 V
I
C
Collector Current - Continuous 8.0 A
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 100mA, IB = 0 30 V
I
CBO
Collector Cut-off Current V
CB
= 60V, IE = 0 10 µA
I
EBO
Emitter Cut-off Current V
EB
= 5V, IC = 0 100 µA
On Characteristics
h
FE
DC Current Gain V
CE
= 5V, I
C
= 8A
V
CE
= 5V, I
C
= 10A
V
CE
= 5V, I
C
= 12A
100
80
65
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 8A, I
B
= 0.4A 1 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 8A, I
B
= 0.8A 1.5 V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 500mA 25 MHz
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
60
480
W
mW/°C
R
θJC
Thermal Resistance, Junction to Case 2.1 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 62.5 °C/W
D45H2A
PNP Power Amplifier
• This device is designed for power amplifier, regulator and switching
circuits where speed is important.
• Sourced from process 5Q.
1. Base 2. Collector 3. Emitter