Data Sheet

CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
October 2014
CNY171M, CNY172M, CNY173M, CNY174M,
CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,
MOC8106M
6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Features
■
High BV
CEO
: 70 V Minimum (CNY17XM, CNY17FXM,
MOC8106M)
■
Closely Matched Current Transfer Ratio (CTR)
Minimizes Unit-to-Unit Variation
■
Current Transfer Ratio In Select Groups
■
Very Low Coupled Capacitance Along With
No Chip-to-Pin 6 Base Connection for Minimum Noise
Susceptability (CNY17FXM, MOC8106M)
■
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■
Power Supply Regulators
■ Digital Logic Inputs
■
Microprocessor Inputs
■
Appliance Sensor Systems
■
Industrial Controls
Description
The CNY17XM, CNY17FXM, and MOC8106M devices
consist of a gallium arsenide infrared emitting diode
coupled with an NPN phototransistor in a dual in-line
package.
Package Outlines
Figure 1. Package Outlines
Schematics
Figure 2. Schematics
CNY17F1M/2M/3M/4M
MOC8106M
CNY171M/2M/3M/4M
1
2
6
5 COLLECTOR COLLECTOR
4 EMITTERNC NC
NC
ANODE
CATHODE
3
1
2
6
5
4 EMITTER
BASE
ANODE
CATHODE
3