Datasheet

1997 Aug 13 8
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84; BUX85
Fig.8 Power derating curve.
handbook, halfpage
050
T
mb
(
o
C)
100 150
120
0
40
80
MGD283
P
tot max
(%)
Fig.9 Base-emitter saturation voltage as a
function of emitter current; typical values.
T
j
=25°C.
(1) I
C
=1A.
(2) I
C
= 0.5 A.
(3) I
C
= 0.3 A.
handbook, halfpage
0 300
1.0
0.5
MGB904
0.75
100 200
V
BEsat
(V)
I
B
(mA)
(2)
(3)
(1)
Fig.10 DC current gain; typical values.
handbook, halfpage
10
−2
10
−1
1
10
2
10
1
h
FE
I
C
(A)
10
MGB879
typ
Fig.11 Switching time waveforms with
resistive load.
handbook, halfpage
MBB731
t
90%
10%
90%
10%
I
C
I
B
I
B on
I
B off
I
C on
t
r
≤30 ns
t
s
t
f
t
on
t