Datasheet

1997 Aug 13 7
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84; BUX85
Fig.6 Transient thermal impedance.
handbook, full pagewidth
MGB863
10
10
−1
10
−2
10
−3
10
−2
10
−1
110
t
p
(ms)
10
2
10
3
1
Z
th j−mb
(K/W)
t
p
t
p
T
P
t
T
δ =
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
δ = 1
Fig.7 Collector-emitter saturation voltage as a function of base current; typical values.
handbook, full pagewidth
0.3
I
B
(A)
4
(1)
3
0
0
V
CEsat
(V)
0.05 0.25
MGB908
2
1
0.20.1
0.15
(2) (3) (4)
(1) I
C
= 0.3 A. (2) I
C
= 0.5 A. (3) I
C
= 0.7 A. (4) I
C
=1A. T
j
=25°C; solid line: typical values; dotted line: maximum values.