Datasheet

1997 Aug 13 6
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84; BUX85
Fig.5 Forward bias SOAR.
BUX85.
T
mb
≤ 50 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided R
BE
≤ 100 Ω and t
p
≤ 0.6 µs.
IV - Repetitive pulse operation in this region is permissible provided V
BE
≤ 0 and t
p
≤ 2 ms.
(1) P
tot max
and P
tot peak max
lines.
(2) Second breakdown limits.
handbook, full pagewidth
MGB939
10
1
10
2
10
3
10
4
V
CE
(V)
10
10
−1
10
−3
10
−2
I
C
(A)
δ = 0.01
1 ms
2 ms
5 ms
DC
10 µs
20 µs
50 µs
100 µs
200 µs
500 µs
t
p
=
2 µs
5 µs
III
I
II
IV
(2)
(1)
I
C max
I
CM max
10 ms