Datasheet

1997 Aug 13 4
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84; BUX85
Note
1. Measured with a half-sinewave voltage (curve tracer).
Switching times in horizontal deflection circuit (see Fig.11)
t
on
turn-on time I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
= −400 mA; V
CC
= 250 V
− 0.2 0.5 µs
t
f
fall time I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
= −400 mA; V
CC
= 250 V
− 0.4 −µs
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
= −400 mA; V
CC
= 250 V;
T
mb
=95°C
−−1.4 µs
t
s
storage time I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
= −400 mA; V
CC
= 250 V
− 2 3.5 µs
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Fig.2 Test circuit for collector-emitter
sustaining voltage.
a
ndbook, halfpage
MGE252
+ 50 V
100 to 200 Ω
30 to 60 Hz
L
6 V
oscilloscope
vertical
horizontal
1 Ω
300 Ω
Fig.3 Oscilloscope display for collector-emitter
sustaining voltage.
handbook, halfpage
MGE239
I
C
(mA)
250
200
100
0
min
V
CEOsust
V
CE
(V)