Datasheet

1997 Aug 13 3
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84; BUX85
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
collector-emitter peak voltage V
BE
=0
BUX84 − 800 V
BUX85 − 1000 V
V
CEO
collector-emitter voltage open base
BUX84 − 400 V
BUX85 − 450 V
I
C
collector current (DC) see Figs 4 and 5 − 2A
I
CM
collector current (peak value) t
p
= 2 ms; see Figs 4 and 5 − 3A
I
B
base current (DC) − 0.75 A
I
BM
base current (peak value) − 1A
I
BM
base current (reversed; peak value) turn-off current −−1A
P
tot
total power dissipation T
mb
≤ 25 °C; see Fig.8 − 40 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
collector-emitter sustaining voltage I
C
= 100 mA; I
Boff
=0;
L = 25 mH; see Figs 2 and 3
BUX84 400 −−V
BUX85 450 −−V
V
CEsat
collector-emitter saturation voltage I
C
= 0.3 A; I
B
=30mA;
see Fig.7
−−0.8 V
I
C
= 1 A; I
B
= 200 mA; see Fig.7 −−1V
V
BEsat
base-emitter saturation voltage I
C
= 1 A; I
B
= 200 mA; see Fig.9 −−1.1 V
I
CES
collector-emitter cut-off current V
CEM
=V
CEMSmax
; V
BE
=0;
note 1
−−200 µA
V
CEM
=V
CEMSmax
; V
BE
=0;
T
j
= 125 °C; note 1
−−1.5 mA
I
EBO
emitter-base cut-off current V
EB
=5V; I
C
=0 −−1mA
h
FE
DC current gain V
CE
=5V; I
C
= 5 A; see Fig.10 15 −−
V
CE
=5V; I
C
= 100 mA;
see Fig.10
20 50 100
f
T
transition frequency V
CE
=10V; I
C
= 200 mA;
f = 1 MHz
− 20 − MHz