Datasheet

1997 Aug 13 2
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84; BUX85
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems
Switching applications.
PINNING
PIN DESCRIPTION
1 base
2 collector; connected to mounting base
3 emitter
Fig.1 Simplified outline (TO-220AB) and symbol.
MBK106
123
3
2
1
MBB008
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
collector-emitter peak voltage V
BE
=0
BUX84 800 V
BUX85 1000 V
V
CEO
collector-emitter voltage open base
BUX84 400 V
BUX85 450 V
V
CEsat
collector-emitter saturation voltage I
C
= 1 A; I
B
= 200 mA; see Fig.7 1V
I
C
collector current (DC) see Figs 4 and 5 2A
I
CM
collector current (peak value) see Figs 4 and 5 3A
P
tot
total power dissipation T
mb
25 °C; see Fig.8 40 W
t
f
fall time resistive load; see Fig.11 0.4 −µs
SYMBOL PARAMETER VALUE UNIT
R
th j-mb
thermal resistance from junction to mounting base 2.5 K/W
R
th j-a
thermal resistance from junction to ambient in free air 70 K/W