Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsN/A NPN NPN

DATA SHEET

Product speciﬁcation

Supersedes data of February 1996

File under Discrete Semiconductors, SC06

1997 Aug 13

DISCRETE SEMICONDUCTORS

BUX84; BUX85

Silicon diffused power transistors

Summary of content (12 pages)

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DISCRETE SEMICONDUCTORS DATA SHEET BUX84; BUX85 Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13
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Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUX84; BUX85 PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS PIN DESCRIPTION 1 base 2 collector; connected to mounting base 3 emitter • Converters • Inverters • Switching regulators • Motor control systems 2 • Switching applications. 1 3 MBB008 MBK106 1 2 3 Fig.1 Simplified outline (TO-220AB) and symbol.
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Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VCESM collector-emitter peak voltage VCEO CONDITIONS MIN. MAX.
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Philips Semiconductors Product specification Silicon diffused power transistors SYMBOL BUX84; BUX85 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Switching times in horizontal deflection circuit (see Fig.11) ton turn-on time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 0.2 0.5 µs tf fall time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 0.4 − µs ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V; Tmb = 95 °C − − 1.
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Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUX84; BUX85 MGB940 10 ICM max IC (A) δ = 0.01 tp = 2 µs IC max 5 µs 10 µs (1) 20 µs 1 50 µs 100 µs 200 µs II I 500 µs 10−1 (2) 1 ms 2 ms 5 ms 10 ms DC 10−2 III IV 10−3 10 102 103 VCE (V) 104 BUX84. Tmb ≤ 50 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation.
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Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUX84; BUX85 MGB939 10 ICM max IC (A) δ = 0.01 tp = 2 µs IC max 5 µs (1) 10 µs 1 20 µs 50 µs 100 µs II I 200 µs 500 µs 10−1 1 ms (2) 2 ms 5 ms 10 ms DC 10−2 III IV 10−3 10 102 103 VCE (V) 104 BUX85. Tmb ≤ 50 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation.
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Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 MGB863 10 handbook, full pagewidth Zth j−mb δ=1 (K/W) 0.75 0.50 1 0.33 0.20 0.10 0.05 10−1 δ= P 0.02 0.01 0 tp T t tp T 10−2 10−3 10−2 10−1 1 10 102 103 tp (ms) Fig.6 Transient thermal impedance. (1) (2) (3) (4) MGB908 4 handbook, full pagewidth VCEsat (V) 3 2 1 0 0 (1) IC = 0.3 A. 0.05 (2) IC = 0.5 A. 0.1 (3) IC = 0.7 A. 0.15 (4) IC = 1 A. 0.2 0.
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Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 MGB904 MGD283 1.0 120 handbook, halfpage handbook, halfpage Ptot max VBEsat (V) (%) (1) (2) (3) 80 0.75 40 0.5 0 0 50 100 Tmb (oC) 150 0 100 200 300 IB (mA) Tj = 25 °C. (1) IC = 1 A. (2) IC = 0.5 A. (3) IC = 0.3 A. Fig.9 Fig.8 Power derating curve. MGB879 102 handbook, halfpage Base-emitter saturation voltage as a function of emitter current; typical values.
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Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 +25 V handbook, full pagewidth BD139 200 Ω 680 µF T 250 Ω 100 µF 100 Ω VIM D.U.T. tp Vi 100 Ω 30 Ω MGE253 50 Ω BD140 680 µF tp = 20 µs; T = 2 ms; VIM = 15 V. Fig.12 Test circuit resistive load.
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Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 PACKAGE OUTLINE Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 P q D1 D L1 L2(1) Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 c D D1 E e L L1 L2 max. P q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.
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Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
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