Data Sheet

3
Test Circuits
0
- 10
V
IN
V
IN
0.1
µµ
µµ
µF
'A'
500
ΩΩ
ΩΩ
Ω
890
ΩΩ
ΩΩ
Ω
0.1
µµ
µµ
µF
1 K
ΩΩ
ΩΩ
Ω
+6V
V
OUT
0
- 4V
10%
V
OUT
t
s
10% Pulse waveform
at point ' A'
0.0023
µµ
µµ
µF
0.0023
µµ
µµ
µF
10
µµ
µµ
µF
10
µµ
µµ
µF
++
11 V
10 V
500
ΩΩ
ΩΩ
Ω
91
ΩΩ
ΩΩ
Ω
Pulse generator
V
IN
Rise Time < 1 ns
Source Impedance = 50Ω
PW ≥ 300 ns
Duty Cycle < 2%
56
ΩΩ
ΩΩ
Ω
FIGURE 1: Charge Storage Time Measurement Circuit
t
off
10%
90%
V
OUT
V
IN
0
V
OUT
t
off
V
BB
= 12 V
V
IN
= - 20.9 V
V
IN
V
OUT
10%
90%
V
IN
0
t
on
t
on
V
BB
= - 3.0 V
V
IN
= + 15.25 V
To sampling oscilloscope input
impedance = 50Ω
Rise Time ≤ 1 ns
Pulse generator
V
IN
Rise Time < 1 ns
Source Impedance = 50Ω
PW ≥ 300 ns
Duty Cycle < 2%
0.0023
µµ
µµ
µF
0.0023
µµ
µµ
µF
0.05
µµ
µµ
µF 0.05
µµ
µµ
µF
0.1
µµ
µµ
µF
0.1
µµ
µµ
µF
3.3 K
ΩΩ
ΩΩ
Ω
50
ΩΩ
ΩΩ
Ω
3.3 K
ΩΩ
ΩΩ
Ω
220
ΩΩ
ΩΩ
Ω
50
ΩΩ
ΩΩ
Ω
V
CC
= 3.0 V
V
BB
FIGURE 2: t
ON
, t
OFF
Measurement Circuit
BSV52
NPN Switching Transistor
(continued)