Data Sheet

3
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 10 mA, I
B
= 012V
V
(BR)CES
Collector-Base Breakdown Voltage
I
C
= 10
µ
A, I
E
= 0
20 V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
µ
A, I
C
= 0
5.0 V
I
CBO
Collector-Cutoff Current V
CB
= 10 V, I
E
= 0
V
CB
= 10 V, I
E
= 0, T
A
= 125
°
C
100
5.0
nA
µ
A
ON CHARACTERISTICS
h
FE
DC Current Gain I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
25
40
25
120
V
CE(
sat
)
Collector-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 0.3 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.3
0.25
0.4
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.7 0.85
1.2
V
V
Symbol Parameter Test Conditions Min Max Units
SMALL SIGNAL CHARACTERISTICS
f
T
Transition Frequency I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
400 MHz
C
cb
Collector-Base Capacitance I
E
= 0, V
CB
= 5.0 V, f = 1.0 MHz 4.0 pF
C
eb
Emitter-Base Capacitance I
C
= 0, V
EB
= 1.0 V, f = 1.0 MHz 4.5 pF
SWITCHING CHARACTERISTICS
t
s
Storage Time I
B1
= I
B2
= I
C
= 10 mA 13 ns
t
on
Turn-On Time V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= 3.0 mA
12 ns
t
off
Turn-Off Time V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= 3.0 mA, I
B2
= 1.5 mA
18 ns
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
NPN Switching Transistor
(continued)
BSV52