Data Sheet

BSS84 — P-Channel Enhancement Mode Field-Effect Transistor
Typical Characteristics (Continued)
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -0.10A
V
DS
= -8V
-25V
-30V
0
20
40
60
80
100
0 1020304050
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
0
1
2
3
4
5
0.01 0.1 1 10 100
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θJA
= 350캜/W
T
A
= 25캜
Figure 9. Maximum Safe Operating Area Figure 10. Single-Pulse Maximum Power
Dissipation
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 350
o
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P
(p
k
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described on page 1.
Transient thermal response will change depending on the circuit board design.
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