Data Sheet

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2
BSS84 — P-Channel Enhancement Mode Field-Effect Transistor
Electrical Characteristics
(2)
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250
μ
A
–50 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250
μ
A,
Referenced to 25℃
–48
mV / ℃
I
DSS
Zero Gate Voltage Drain Current
V
DS
= –50 V, V
GS
= 0 V –15
μ
A
V
DS
= –50 V, V
GS
= 0 V,
T
J
= 125°C
–60
μA
I
GSS
Gate–Body Leakage.
V
GS
= ±20 V, V
DS
= 0 V ±10
nA
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250
μ
A
–50 V
On Characteristics
(2)
V
GS
(
th
)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= –1 mA –0.8 –1.7 –2 V
V
GS(TH)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –1 mA,
Referenced to 25℃
3
mV / ℃
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –5 V, I
D
= –0.10 A 1.2 10.0
Ω
V
GS
= –5 V, I
D
= –0.10 A,
T
J
= 125°C
1.9 17.0
Ω
I
D
(
on
)
On–State Drain Current V
GS
= –5 V, V
DS
= – 10 V –0.6 A
g
FS
Forward Transconductance V
DS
= –25 V, I
D
= – 0.10 A 0.05 0.60 S
Dynamic Characteristics
C
ISS
Input Capacitance
V
DS
= –25 V,
V
GS
= 0 V,
f = 1.0 MHz
73 pF
C
OSS
Output Capacitance 10 pF
C
RSS
Reverse Transfer Capacitance 5 pF
R
G
Gate Resistance V
GS
= –15 mV, f = 1.0 MHz 9
Ω
Switching Characteristics
(2)
t
d
(
on
)
Turn–On Delay
V
DD
= –30 V, I
D
= – 0.27 A,
V
GS
= –10 V, R
GEN
= 6 
2.5 5.0 ns
t
r
Turn–On Rise Time 6.3 13.0 ns
t
d
(
off
)
Turn–Off Delay 10 20 ns
t
f
Turn–Off Fall Time 4.8 9.6 ns
Q
g
Total Gate Charge
V
DS
= –25 V, I
D
= –0.10 A,
V
GS
= –5 V
0.9 1.3 nC
Q
g
s
Gate–Source Charge 0.2 nC
Q
g
d
Gate–Drain Charge 0.3 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -0.13 A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= - 0.26 A
(2)
-0.8 -1.2 V
t
RR
Diode Reverse-Recovery Time
I
F
= -0.1 A,
d
iF
/ d
t
= 100 A / µs
(2)
10 ns
Q
RR
Diode Reverse-Recovery Charge 3 nC
Note:
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.