Datasheet

BSS123LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 250 µAdc)
V
(BR)DSS
100 – – Vdc
Zero Gate Voltage Drain Current
(V
GS
= 0, V
DS
= 100 Vdc) T
J
= 25°C
T
J
= 125°C
I
DSS
–
–
–
–
15
60
µAdc
Gate–Body Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0)
I
GSS
– – 50 nAdc
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(th)
0.8 – 2.8 Vdc
Static Drain–Source On–Resistance
(V
GS
= 10 Vdc, I
D
= 100 mAdc)
r
DS(on)
– 5.0 6.0 Ω
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 100 mAdc)
g
fs
80 – – mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
– 20 – pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
– 9.0 – pF
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
– 4.0 – pF
SWITCHING CHARACTERISTICS
(4)
Turn–On Delay Time
(V
CC
= 30 Vdc, I
C
= 0.28 Adc,
t
d(on)
– 20 – ns
Turn–Off Delay Time
(V
CC
30
Vdc
,
I
C
0
.
28
Adc
,
V
GS
= 10 Vdc, R
GS
= 50 Ω)
t
d(off)
– 40 – ns
REVERSE DIODE
Diode Forward On–Voltage
(I
D
= 0.34 Adc, V
GS
= 0 Vdc)
V
SD
– – 1.3 V
4. Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.