Datasheet

 Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 3
1 Publication Order Number:
BSS123LT1/D
BSS123LT1
Preferred Device
Power MOSFET
170 mAmps, 100 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DSS
100 Vdc
Gate–Source Voltage
– Continuous
– Non–repetitive (t
p
≤ 50 µs)
V
GS
V
GSM
±20
±40
Vdc
Vpk
Drain Current
Continuous (Note 1.)
Pulsed (Note 2.)
I
D
I
DM
0.17
0.68
Adc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5
Board (Note 3.)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to
Ambient
R
JA
556 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width  300 s, Duty Cycle  2.0%.
3. FR–5 = 1.0  0.75  0.062 in.
3
1
2
Device Package Shipping
ORDERING INFORMATION
BSS123LT1 SOT–23 3000 Tape & Reel
N–Channel
SOT–23
CASE 318
STYLE 21
http://onsemi.com
W
MARKING
DIAGRAM
SA
SA = Device Code
W = Work Week
PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
BSS123LT3 SOT–23 10,000 Tape & Reel
170 mAMPS
100 VOLTS
R
DS(on)
= 6 
Preferred devices are recommended choices for future use
and best overall value.