Data Sheet

©2002 Fairchild Semiconductor Corporation Rev. A, July 2002
BSR16
Electrical Characteristics T
a
=25°C unless otherwise noted
Thermal Characteristics
T
A
=25°C unless otherwise noted
* Device mounted on FR-4 PCB 40mm × 40mm × 1.5mm
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= -10mA, I
B
= 0 -60 V
BV
(BR)CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
= 0 -60 V
BV
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= -10µA, I
C
= 0 -5.0 V
I
CBO
Collector Cut-off Current V
CB
= -50V
V
CB
= -50V, T
A
= 150°C
-10
-10
nA
µA
I
CEX
Collector Cut-off Current V
CE
= -30V, V
EB
= -0.5V -50 nA
I
BEX
Reverse Base Current V
CE
= -30V, V
EB
= -3.0V -50 nA
On Characteristics
h
FE
DC Current Gain I
C
= -0.1mA, V
CE
= -10V
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
75
100
100
100
50
300
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
-0.4
-1.6
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
-1.3
-2.6
V
V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product I
C
= -50mA, V
CE
= -20V,
f = 100MHz, T
A
= 25°C
200 MHz
C
cb
Output Capacitance V
CB
= -10V, I
E
= 0, f = 1.0MHz 8.0 pF
C
eb
Emitter-Base Capacitance V
CB
= -2.0V, I
E
= 0, f = 1.0MHz 30 pF
Switching Characteristics
t
on
Turn-On Time V
CC
= -30V, I
C
= -150mA,
I
B1
= -15mA
45 ns
t
d
Delay Time 10 ns
t
r
Rise Time 40 ns
t
off
Turn-Off Time V
CC
= -30V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
100 ns
t
s
Storage Time 80 ns
t
f
Fall Time 30 ns
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W