Data Sheet

©2002 Fairchild Semiconductor Corporation Rev. A, July 2002
BSR16
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage -60 V
V
CBO
Collector-Base Voltage -60 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current - Continuous -800 mA
T
J
, T
ST
Operating and Storage Junction Temperature Range -55 ~ +150 °C
BSR16
PNP General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 500mA.
• Sourced from Process 63.
• See BCW68G for Characteristics.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: T8