Data Sheet

BSR14 — NPN General Purpose Amplifier
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSR14 Rev. B0 2
Electrical Characteristics T
a
= 25°C unless otherwise noted
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7
Xtf=3 Rb=10)
Symbol
Parameter Test Condition Min. Max. Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 10A, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10A, I
E
= 0 75 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10A, I
C
= 0 6.0 V
I
CBO
Collector-Cutoff Current V
CB
= 60V,
V
CB
= 60V, T
a
= 150°C
10
10
nA
A
I
CEX
Collector-Cutoff Current V
CE
= 60V, V
EB
= 3.0V 10 nA
I
BEX
Reverse Base Current V
CE
= 60V, V
EB
= 3.0V 20 nA
I
EBO
Emitter-Cutoff Current V
EB
= 3.0V, I
C
= 0 15 nA
ON CHARACTERISTICS
h
FE
DC Current Gain I
C
= 0.1mA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 10V
35
50
75
100
50
40
300
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
0.3
1.0
V
V
V
BE(sat)
Base-Emitter Saturation Voltage I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
0.6 1.2
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product I
C
= 20mA, V
CE
= 20V,
f = 100mHz
300 MHz
C
CB
Collector-Base Capacitance V
CB
= 10V, I
E
= 0,
f = 1.0MHz
8.0 pF
h
ie
Input Impedance V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
2.0 8.0 k
h
fe
Small-Signal Current Gain V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
50 300
h
oe
Output Admittance V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
535S
SWITCHING CHARACTERISTICS
t
d
Delay Time V
CC
= 30V, V
BE(OFF)
=
0.5V, I
C
= 150mA,
I
B1
= 15mA
10 ns
t
r
Rise Time 25 ns
t
s
Storage Time V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
225 ns
t
f
Fall Time 60 ns