Data Sheet

BSR14 — NPN General Purpose Amplifier
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSR14 Rev. B0 1
September 2012
BSR14
NPN General Purpose Amplifier
Features
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.
• Sourced from Process 19.
• See BCW65C for characteristics.
Absolute Maximum Ratings* T
a
= 25C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T
a
= 25C unless otherwise noted
* Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 75 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current - Continuous 800 mA
T
J,
T
stg
Operating and Storage Junction Temperature Range -55 to +150 C
Symbol Parameter
Max.
Units
*BSR14
P
D
Total Device Dissipation
Derate above 25C
350
2.8
mW
mW/C
R
JA
Thermal Resistance, Junction to Ambient 357 C/W
SOT-23
Mark:U8
C
B
E