Data Sheet

BS170
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate Reverse Current
(V
GS
= 15 Vdc, V
DS
= 0)
I
GSS
− 0.01 10 nAdc
Drain−Source Breakdown Voltage
(V
GS
= 0, I
D
= 100 mAdc)
V
(BR)DSS
60 90 − Vdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(Th)
0.8 2.0 3.0 Vdc
Static Drain−Source On Resistance
(V
GS
= 10 Vdc, I
D
= 200 mAdc)
r
DS(on)
− 1.8 5.0
W
Drain Cutoff Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
I
D(off)
− − 0.5
mA
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 250 mAdc)
g
fs
− 200 − mmhos
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(V
DS
= 10 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
− − 60 pF
SWITCHING CHARACTERISTICS
Turn−On Time
(I
D
= 0.2 Adc) See Figure 1
t
on
− 4.0 10 ns
Turn−Off Time
(I
D
= 0.2 Adc) See Figure 1
t
off
− 4.0 10 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
Package Shipping
†
BS170 TO−92 (TO−226)
(Pb−Free)
1000 Unit/Tube
BS170RLRAG TO−92 (TO−226)
(Pb−Free)
2000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.