Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsN/A NPN NPN

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 12

1 Publication Order Number:

BDX33B/D

BDX33B, BDX33C* (NPN)

BDX34B, BDX34C* (PNP)

BDX33C and BDX34C are Preferred Devices

Darlington Complementary

Silicon Power Transistors

These devices are designed for general purpose and low speed

switching applications.

Features

•High DC Current Gain - h

= 2500 (typ.) at I

= 4.0

•Collector-Emitter Sustaining Voltage at 100 mAdc

CEO(sus)

= 80 Vdc (min) - BDX33B, BDX334B

= 100 Vdc (min) - BDX33C, BDX334C

•Low Collector-Emitter Saturation Voltage

CE(sat)

= 2.5 Vdc (max) at I

= 3.0 Adc

- BDX33B, 33C/34B, 34C

•Monolithic Construction with Build-In Base-Emitter Shunt Resistors

•Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage

BDX33B, BDX34B

BDX33C, BDX34C

CEO

100

Vdc

Collector-Base Voltage

BDX33B, BDX34B

BDX33C, BDX34C

100

Vdc

Emitter-Base Voltage V

5.0 Vdc

Collector Current - Continuous

- Peak

Adc

Base Current I

0.25 Adc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

0.56

W/°C

Operating and Storage Junction

Temperature Range

, T

stg

-65 to +150 °C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction-to-Case

1.78 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DARLINGTON

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80-100 VOLTS, 65 WATTS

TO-220AB

CASE 221A-09

STYLE 1

http://onsemi.com

MARKING DIAGRAM

BDX3xy = Device Code

x = 3 or 4

y = B or C

A = Assembly Location

Y = Year

WW = Work Week

G = Pb-Free Package

BDX3xyG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

Preferred devices are recommended choices for future use

and best overall value.

Summary of content (6 pages)

PAGE 1
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 • Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - BDX33C, BDX334C • Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.
PAGE 2
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) PD, POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 160 Figure 1.
PAGE 3
r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RqJC(t) = r(t) RqJC RqJC = 1.92°C/W 0.02 t1 0.03 0.01 0.02 t2 SINGLE PULSE D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) SINGLE PULSE DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.
PAGE 4
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) NPN BDX33B, 33C PNP BDX34B, 34C 20,000 20,000 VCE = 4.0 V VCE = 4.0 V 10,000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 TJ = 150°C 5000 3000 2000 25°C 1000 - 55°C 5000 2000 500 300 200 300 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 25°C 1000 500 0.1 TJ = 150°C 3000 5.0 7.0 10 - 55°C 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.
PAGE 5
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) ORDERING INFORMATION Device BDX33B BDX33BG BDX33C BDX33CG BDX34B BDX34BG BDX34C BDX34CG Package Shipping† TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO-220 (Pb-Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.
PAGE 6
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE -TB SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.