Datasheet
1
Motorola Bipolar Power Transistor Device Data
. . . for use as output devices in complementary general–purpose amplifier applica-
tions.
• High DC Current Gain —
h
FE
= 750 (Min) @ I
C
= 1.5 and 2.0 Adc
• Monolithic Construction
• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A,
677, 677A, 679, 679A, 681
• BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
MAXIMUM RATING
Rating Symbol
BD676
BD676A
BD678
BD678A
BD680
BD680A
BD682 Unit
Collector–Emitter Voltage V
CEO
45 60 80 100 Vdc
Collector–Base Voltage V
CB
45 60 80 100 Vdc
Emitter–Base Voltage V
EB
5.0 Vdc
Collector Current I
C
4.0 Adc
Base Current I
B
0.1 Adc
Total Device Dissipation
@ T
C
= 25 C
Derate above 25 C
P
D
40
0.32
Watts
W/ C
Operating and Storage Junction
Temperating Range
T
J
, T
stg
–55 to +150
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case θ
JC
3.13
C/W
50
40
10
5.0
0
15 30 45 60 75 105 135 150 165
Figure 1. Power Temperature Derating
T
C
, CASE TEMPERATURE (
°
C)
P
D
, POWER DISSIPATION (WATTS)
12090
45
20
15
30
25
35
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD676/D
Motorola, Inc. 1995
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLTS
40 WATTS
CASE 77–08
TO–225AA TYPE
REV 7