Data Sheet

©2000 Fairchild Semiconductor International Rev. A, February 2000
BD175/177/179
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
h
FE
Classificntion
* Classification 16: Only BD175
Symbol Parameter Value Units
V
CBO
*Collector-Base Voltage : BD175
: BD177
: BD179
45
60
80
V
V
V
V
CEO
Collector-Emitter Voltage : BD175
: BD177
: BD179
45
60
80
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 3 A
I
CP
*Collector Current (Pulse) 7 A
P
C
Collector Dissipation (T
C
=25°C) 30 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BD175
: BD177
: BD179
I
C
= 100mA, I
B
= 0 45
60
80
V
V
V
I
CBO
Collector Cut-off Current : BD175
: BD177
: BD179
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
100
100
100
µA
µA
µA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1 mA
h
FE1
h
FE2
* DC Current Gain V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 1A
40
15
250
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 1A, I
B
= 0.1A 0.8 V
V
BE
(on) * Base-Emitter On Voltage V
CE
= 2V, I
C
= 1A 1.3 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 250mA 3 MHz
Classification 6 10 16
h
FE1
40 ~ 100 63 ~ 160 100 ~ 250
BD175/177/179
Medium Power Linear and Switching
Applications
• Complement to BD 176/178/180 respectively
1
TO-126
1. Emitter 2.Collector 3.Base