Datasheet

1
Motorola Bipolar Power Transistor Device Data
. . . designed for power output stages for television, radio, phonograph and other
consumer product applications.
• Suitable for Transformerless, Line–Operated Equipment
• Thermopad Construction Provides High Power Dissipation Rating for High
Reliability
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector–Emitter Voltage V
CEO
350 Vdc
Collector–Base Voltage V
CB
375 Vdc
Emitter–Base Voltage V
EB
5.0 Vdc
Collector Current — Continuous
Peak
I
C
0.5
1.0
Adc
Base Current I
B
0.25 Adc
Total Device Dissipation @ T
C
= 25 C
Derate above 25 C
P
D
20
0.16
Watts
W/ C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case θ
JC
6.25
C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25 C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
BV
CEO
350 — Vdc
Collector Cutoff Current
(At rated voltage)
I
CBO
— 100 µAdc
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
I
EBO
— 100 µAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 50 mAdc, V
CE
= 10 Vdc)
h
FE
30 240 —
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD159/D
 Motorola, Inc. 1998
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS
20 WATTS
CASE 77–09
TO–225AA TYPE