Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsN/A BD 139 NPN BD 139 NPN

August, 2012 − Rev. 13

1 Publication Order Number:

BD135/D

BD135, BD137, BD139

Plastic Medium Power

Silicon NPN Transistors

This series of plastic, medium−power silicon NPN transistors are

designed for use as audio amplifiers and drivers utilizing

complementary or quasi complementary circuits.

Features

• DC Current Gain − h

= 40 (Min) @ I

= 0.15 Adc

• BD 135, 137, 139 are complementary with BD 136, 138, 140

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage BD135

BD137

BD139

CEO

Vdc

Collector−Base Voltage BD135

BD137

BD139

CBO

100

Vdc

Emitter−Base Voltage V

EBO

5.0 Vdc

Collector Current I

1.5 Adc

Base Current I

0.5 Adc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

1.25

Watts

mW/°C

Total Device Dissipation @ T

= 25°C

Derate above 25°C

12.5

100

Watts

mW/°C

Operating and Storage Junction

Temperature Range

, T

stg

– 55 to

+ 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recom-

mended Operating Conditions is not implied. Extended exposure to

stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case

10 °C/W

Thermal Resistance,

Junction−to−Ambient

100 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Device Package Shipping

†

1.5 A POWER TRANSISTORS

NPN SILICON

45, 60, 80 V, 12.5 W

Y = Year

WW = Work Week

xx = 35, 37, 39

G = Pb−Free Package

BD139G

TO−225AA

(Pb−Free)

500 Units / Box

TO−225

CASE 77

STYLE 1

MARKING DIAGRAM

YWW

BD1xxG

BD135TG TO−225AA

(Pb−Free)

50 Units / Rail

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BD135G TO−225AA

(Pb−Free)

500 Units / Box

BD137G TO−225AA

(Pb−Free)

500 Units / Box

ORDERING INFORMATION

Summary of content (3 pages)

PAGE 1
BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 1.5 A POWER TRANSISTORS NPN SILICON 45, 60, 80 V, 12.
PAGE 2
BD135, BD137, BD139 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Collector−Emitter Sustaining Voltage* (IC = 0.03 Adc, IB = 0) BVCEO* Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TC = 125_C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO DC Current Gain (IC = 0.005 A, VCE = 2 V) (IC = 0.15 A, VCE = 2 V) (IC = 0.5 A VCE = 2 V) hFE* Type Min Max BD135 BD137 BD139 45 60 80 − − − − − 0.
PAGE 3
BD135, BD137, BD139 PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AA E A1 Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. A DIM A A1 b b2 c D E e L L1 P Q D P 1 2 3 L1 MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 L STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3.