Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsSmall Signal Transistor, SOT-23, PNP, -65V

March, 2014 − Rev. 14

Publication Order Number:

BC856ALT1/D

BC856ALT1G Series

General Purpose

Transistors

PNP Silicon

Features

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Collector-Emitter Voltage

BC856, SBC856

BC857, SBC857

BC858, NSVBC858, BC859

CEO

−65

−45

−30

Collector-Base Voltage

BC856, SBC856

BC857, SBC857

BC858, NSVBC858, BC859

CBO

−80

−50

−30

Emitter−Base Voltage V

EBO

−5.0 V

Collector Current − Continuous I

−100 mAdc

Collector Current − Peak I

−200 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) T

= 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient

556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) T

= 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient

417 °C/W

Junction and Storage Temperature T

, T

stg

−55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

SOT−23 (TO−236AB)

CASE 318

STYLE 6

COLLECTOR

BASE

EMITTER

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

MARKING DIAGRAM

xx M G

xx = Device Code

xx = (Refer to page 6)

M = Date Code*

G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Summary of content (7 pages)

PAGE 1
BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.
PAGE 2
BC856ALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit BC856, SBC856 Series BC857, SBC857 Series BC858, NSBVC858 BC859 Series V(BR)CEO −65 −45 −30 − − − − − − V Collector −Emitter Breakdown Voltage BC856 S, SBC856eries (IC = −10 mA, VEB = 0) BC857A, SBC857A, BC857B, SBC857B Only BC858, NSVB858, BC859 Series V(BR)CES −80 −50 −30 − − − − − − V Collector −Base Breakdown Voltage (IC = −10 mA) BC856, SBC856 Series BC857, SBC857 Series BC858, NSVB
PAGE 3
BC856ALT1G Series BC857/BC858/BC859/SBC857/NSVBC858 -1.0 1.5 TA = 25°C -0.9 VCE = -10 V TA = 25°C VBE(sat) @ IC/IB = 10 -0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 Figure 1. Normalized DC Current Gain 1.
PAGE 4
BC856ALT1G Series BC856/SBC856 TJ = 25°C VCE = -5.0 V TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage -2.0 -1.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25°C 0 -0.
PAGE 5
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BC856ALT1G Series 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE t1 t2 0.03 DUTY CYCLE, D = t1/t2 0.02 0.01 0.1 ZqJC(t) = r(t) RqJC RqJC = 83.3°C/W MAX ZqJA(t) = r(t) RqJA RqJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) P(pk) 0.2 0.5 1.0 2.0 10 5.0 20 t, TIME (ms) 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 13.
PAGE 6
BC856ALT1G Series ORDERING INFORMATION Device Marking BC856ALT1G SBC856ALT1G* Package Shipping† SOT−23 (Pb−Free) 3,000 / Tape & Reel 3A BC856ALT3G 10,000 / Tape & Reel SOT−23 (Pb−Free) BC856BLT1G SBC856BLT1G* BC856BLT3G 3B 10,000 / Tape & Reel SBC856BLT3G* BC857ALT1G SBC857ALT1G* 3E BC857BLT1G SBC857BLT1G* BC857BLT3G SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 (Pb−Free) 3,000 / Tape & Reel 3F 10,000 / Tape & Reel NSVBC857BLT3G* SOT−23 (Pb−Free) BC857CLT1G SBC857CLT1G* 10,000 / Tape & R
PAGE 7
BC856ALT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.