Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsTransistor (BJT) - Discrete SOT 23-3 1

October, 2016 − Rev. 5

Publication Order Number:

BC808−25LT1/D

BC808-25LT1G,

BC808-40LT1G

General Purpose

Transistors

PNP Silicon

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

−25 V

Collector − Base Voltage V

CBO

−30 V

Emitter − Base Voltage V

EBO

−5.0 V

Collector Current − Continuous I

−500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR− 5 Board,

(Note 1) T

= 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient

556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2)

= 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient

417 °C/W

Junction and Storage Temperature T

, T

stg

−55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

www.onsemi.com

COLLECTOR

BASE

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

SOT−23

CASE 318

STYLE 6

5x M G

5x = Device Code

x = F or G

M = Date Code*

G =Pb−Free Package

MARKING DIAGRAM

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Summary of content (4 pages)

PAGE 1
BC808-25LT1G, BC808-40LT1G General Purpose Transistors PNP Silicon www.onsemi.com Features COLLECTOR 3 • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −25 V Collector − Base Voltage VCBO −30 V Emitter − Base Voltage VEBO −5.
PAGE 2
BC808−25LT1G, BC808−40LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mA) V(BR)CEO −25 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = −10 mA) V(BR)CES −30 − − V Emitter −Base Breakdown Voltage (IE = −1.0 mA) V(BR)EBO −5.0 − − V − − − − −100 −5.
PAGE 3
BC808−25LT1G, BC808−40LT1G 1000 hFE, DC CURRENT GAIN VCE = -1.0 V TA = 25°C 100 10 -0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 -1.0 -1.0 TA = 25°C TJ = 25°C -0.8 -0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 -1.0 -10 IB, BASE CURRENT (mA) -0.4 VCE(sat) @ IC/IB = 10 IC = -10 mA -0.1 VBE(on) @ VCE = -1.0 V -0.6 -0.2 IC = -100 mA 0 -0.01 0 -1.0 -100 -1000 100 +1.0 qVC for VCE(sat) 0 -1.
PAGE 4
BC808−25LT1G, BC808−40LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.