Data Sheet

BC807 / BC808 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC807 / BC808 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Input Output Capacitance
-0 -1 -2 -3 -4 -5
-0
-100
-200
-300
-400
-500
P
T
=
6
0
0
m
W
I
B
=
-
3
.
0
m
A
I
B
=
-
2
.0
m
A
I
B
=
-
3
.5
m
A
I
B
= - 1.0mA
I
B
=
-
1
.
5
m
A
I
B
= - 0.5mA
I
B
=
-
4
.0
m
A
I
B
=
-
2
.
5
m
A
I
B
=
-
4
.
5
m
A
I
B
=
-
5
.0
m
A
I
B
= 0
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0 -10 -20 -30 -40 -50
-0
-4
-8
-12
-16
-20
P
T
=
6
0
0
m
W
I
B
=
-
8
0
μ
A
I
B
=
-
7
0
μ
A
I
B
=
-
6
0
μ
A
I
B
=
-
5
0
μ
A
I
B
=
-
4
0
μ
A
I
B
=
-
3
0
μ
A
I
B
=
-
2
0
μ
A
I
B
=
-
1
0
μ
A
I
B
= 0
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100 -1000
1
10
100
1000
PULSE
- 1.0V
V
CE
= - 2.0V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-0.01
-0.1
-1
-10
I
C
= 10 I
B
PULSE
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9
-0.1
-1
-10
-100
-1000
V
CE
= -1V
PULSE
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
C
ib
f = 1.0MHz
C
ob
C
ib
, C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
EB
[V], EMITTER-BASE VOLTAGE