Data Sheet

BC807 / BC808 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC807 / BC808 Rev. 1.1.0 2
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
h
FE
Classification
Symbol Parameter Value Unit
P
D
Power Dissipation 310 mW
Derate Above 25°C2.48mW/°C
R
θJA
Thermal Resistance, Junction-to-Ambient 403 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
CEO
Collector-Emitter Breakdown
Voltage
BC807
I
C
= -10 mA, I
B
= 0
-45
V
BC808 -25
BV
CES
Collector-Emitter Breakdown
Voltage
BC807
I
C
= -0.1 mA, V
BE
= 0
-50
V
BC808 -30
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -0.1 mA, I
C
= 0 -5 V
I
CES
Collector Cut-Off Current V
CE
= -25 V, V
BE
= 0 -100 nA
I
EBO
Emitter Cut-Off Current V
EB
= -4 V, I
C
= 0 -100 nA
h
FE1
DC Current Gain
V
CE
= -1 V, I
C
= -100 mA 100 630
h
FE2
V
CE
= -1 V, I
C
= -300 mA 60
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -500 mA, I
B
= -50 mA -0.7 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -1 V, I
C
= -300 mA -1.2 V
f
T
Current Gain Bandwidth Product
V
CE
= -5 V, I
C
= -10 mA,
f = 50 MHz
100 MHz
C
ob
Output Capacitance V
CB
= -10 V, f = 1 MHz 12 pF
Classification 16 25 40
h
FE1
100 ~ 250 160 ~ 400 250 ~ 630
h
FE2
60 ~ 100 ~ 170 ~