Data Sheet

BC807 / BC808 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC807 / BC808 Rev. 1.1.0 1
November 2014
BC807 / BC808
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low Power Output Stages
• Complement to BC817 / BC818
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Part Number Marking Package Packing Method
BC80716MTF 9FA SOT-23 3L Tape and Reel
BC80725MTF 9FB SOT-23 3L Tape and Reel
BC80740MTF 9FC SOT-23 3L Tape and Reel
BC80840MTF 9GC SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage
BC807 -50
V
BC808 -30
V
CEO
Collector-Emitter Voltage
BC807 -45
V
BC808 -25
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -800 mA
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 to +150 °C
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3