Data Sheet

BC63916 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter On Voltage
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
1E-3 0.01 0.1 1
0
50
100
150
200
250
V
CE
= 2 V
T
A
= -55
o
C
T
A
= 0
o
C
T
A
= 100
o
C
T
A
= 150
o
C
T
A
= 25
o
C
h
FE
- DC CURRENT GAIN
I
C
- COLLECTOR CURRENT (A)
1E-3 0.01 0.1 1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
= 2 V
T
A
= -55
o
C
T
A
= 0
o
C
T
A
= 100
o
C
T
A
= 150
o
C
T
A
= 25
o
C
V
BE(ON)
- BASE-EMITTER ON VOLTAGE (V)
I
C
- COLLECTOR CURRENT (A)
1E-3 0.01 0.1 1
0.01
0.1
1
V
CE(SAT)
- COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
I
C
- COLLECTOR CURRENT (A)
I
C
= 10I
B
1E-3 0.01 0.1 1
0.1
1
10
V
BE(SAT)
- BASE-EMITTER SATURATION
VOLTAGE (V)
I
C
- COLLECTOR CURRENT (A)
I
C
= 10I
B
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