Data Sheet

BC63916 — NPN Epitaxial Silicon Transistor
www.onsemi.com
2
Thermal Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted.
Note:
2.
PCB s
ize: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol Parameter Value Unit
P
D
Power Dissipation 830 mW
Derate Above T
A
= 25°C 6.6 mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 150 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
CBO
Collector-Base Breakdown Voltage I
C
= 100 μA, I
E
= 0 100 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 10 mA, I
B
= 0 80 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 10 μA, I
C
= 0 5.0 V
I
CBO
Collector Cut-Off Current V
CB
= 30 V, I
E
= 0 100 nA
I
EBO
Emitter Cut-Off Current V
EB
= 5 V, I
C
= 0 10 μA
h
FE
1
DC Current Gain
V
CE
= 2 V, I
C
= 5 mA 25
h
FE
2V
CE
= 2 V, I
C
= 150 mA 100 250
h
FE
3V
CE
= 2 V, I
C
= 500 mA 25
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 500 mA, I
B
= 50 mA 0.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 2 V, I
C
= 500 mA 1 V
f
T
Current Gain Bandwidth Product
V
CE
= 5 V, I
C
= 10 mA,
f = 50 MHz
100 MHz