Data Sheet

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BC63916 — NPN Epitaxial Silicon Transistor

Publication Order Number:

BC63916-D74Z/D

September-2017, Rev. 2

BC63916

NPN Epitaxial Silicon Transistor

Features

• Switching and Amplifier Applications

Ordering Information

Absolute Maximum Ratings

(1)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Note:

1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

Part Number Top Mark Package Packing Method

BC63916-D74Z BC639-16 TO-92 3L Ammo

BC63916-D27Z

BC639-16 TO-92 3L Tape and Reel

Symbol Parameter Value Unit

CER

Collector-Emitter Voltage at R

= 1 kΩ 100 V

CES

Collector-Emitter Voltage 100 V

CEO

Collector-Emitter Voltage 80 V

EBO

Emitter-Base Voltage 5 V

Collector Current 1 A

, T

STG

Operating and Storage Junction Temperature Range -55 to 150 °C

1. Emitter

Straight Lead Bent Lead

TO-92

Bulk Packing Tape & Reel

Ammo Packing

2. Collector

3. Ba

Summary of content (5 pages)

PAGE 1
BC63916 — NPN Epitaxial Silicon Transistor BC63916 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications TO-92 12 3 Straight Lead Bulk Packing 1 2 1. Emitter 2. Collector 3. Base 3 Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method BC63916-D74Z BC639-16 TO-92 3L Ammo BC63916-D27Z BC639-16 TO-92 3L Tape and Reel Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device.
PAGE 2
Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 830 mW Derate Above TA = 25°C 6.6 mW/°C Thermal Resistance, Junction to Ambient 150 °C/W Note: 2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max.
PAGE 3
VBE(ON) - BASE-EMITTER ON VOLTAGE (V) 250 hFE - DC CURRENT GAIN VCE = 2 V 200 o TA = 100 C o TA = 25 C o TA = 150 C 150 o TA = 0 C 100 o TA = -55 C 50 0 1E-3 0.01 0.1 1 1.2 VCE = 2 V 1.0 o 0.8 0.6 o 0.4 o o TA = -55 C 0.2 0.0 1E-3 IC - COLLECTOR CURRENT (A) 1 0.01 0.1 1 IC = 10IB VOLTAGE (V) 0.1 VBE(SAT) - BASE-EMITTER SATURATION 10 IC = 10IB SATURATION VOLTAGE (V) 0.1 Figure 2. Base-Emitter On Voltage 1 VCE(SAT) - COLLECTOR-EMITTER 0.
PAGE 4
BC63916 — NPN Epitaxial Silicon Transistor Physical Dimensions Figure 5. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form www.onsemi.
PAGE 5
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