Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsTransistor (BJT) - Discrete TO 92 1

June, 2011 − Rev. 1

1 Publication Order Number:

BC640/D

BC640-016G

High Current Transistors

PNP Silicon

Features

• This is a Pb−Free Device

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage V

CEO

−80 Vdc

Collector-Base Voltage V

CBO

−80 Vdc

Emitter-Base Voltage V

EBO

−5.0 Vdc

Collector Current − Continuous I

−0.5 Adc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T

= 25°C

Derate above 25°C

1.5

mW/°C

Operating and Storage Junction

Temperature Range

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

200 °C/W

Thermal Resistance, Junction−to−Case

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

COLLECTOR

BASE

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 14

MARKING DIAGRAMS

BC64

0−16

AYWW G

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

Summary of content (4 pages)

PAGE 1
BC640-016G High Current Transistors PNP Silicon Features • This is a Pb−Free Device http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage VCBO −80 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −0.5 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.
PAGE 2
BC640−016G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −80 − − −80 − − −5.0 − − Vdc − − − − −100 −10 nAdc mAdc 25 100 25 − − − − 250 − − −0.25 −0.5 − − −1.0 − 150 − − 9.
PAGE 3
BC640−016G 500 -1000 -200 VCE = -2 V SOA = 1S -B PD TA 25°C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) -500 -100 -50 PD TC 25°C -20 -10 -5 -2 -1 -1 BC636 BC638 BC640 PD TA 25°C PD TC 25°C 200 -A 50 20 -2 -3 -4 -5 -7 -10 -20 -30-40 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -L 100 -1 -3 -5 -300 -500 -1000 Figure 2. DC Current Gain 500 -1 300 V, VOLTAGE (VOLTS) -0.8 VCE = -2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -2 V -0.6 -0.4 -0.
PAGE 4
BC640−016G PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AN A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.