Datasheet

© Semiconductor Components Industries, LLC, 2012
July, 2012 Rev. 4
1 Publication Order Number:
BC560C/D
BC560C
Low Noise Transistors
PNP Silicon
Features
These are PbFree Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
45 Vdc
CollectorBase Voltage V
CBO
50 Vdc
EmitterBase Voltage V
EBO
5.0 Vdc
Collector Current Continuous I
C
100 mAdc
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
625
5.0
mW
mW/°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoAmbient
R
q
JA
200 °C/W
Thermal Resistance, JunctiontoCase
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
Device Package Shipping
ORDERING INFORMATION
BC560CG TO92
(PbFree)
5000 Units / Bulk
BC560CZL1G TO92
(PbFree)
2000 / Ammo Pack
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO92
CASE 29
STYLE 17
MARKING DIAGRAM
BC56
0C
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)

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