Data Sheet

BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 5
Typical Performance Characteristics (Continued)
Figure 7. Current Gain Bandwidth Product Figure 8. Power Deration
Figure 9. Normalized Transient Thermal Resistance
-1 -10
10
100
1000
V
CE
= -5V
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT
0 50 100 150
1
10
100
1000
POWER DISSIPATION, P
D
[mW]
AMBIENT TEMPERATURE, [
o
C]
1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000
0.01
0.1
1
10
100
1000
50%
r(t), Normalized Transient Thermal Resistance
t1, time(sec)
Single Pulse
30%
10%
5%
2%
D=1%
Rthja(t)=r(t)*Rthja
Rthja=250
o
C/W