Data Sheet

BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 3
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
h
FE
Classification
Symbol Parameter Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-Off Current V
CB
= -30 V, I
E
= 0 -15 nA
h
FE
DC Current Gain V
CE
= -5 V, I
C
= -2 mA 110 800
V
CE
(sat)
Collector-Emitter Saturation
Voltage
I
C
= -10 mA, I
B
= -0.5 mA -90 -300
mV
I
C
= -100 mA, I
B
= -5 mA -250 -650
V
BE
(sat) Collector-Base Saturation Voltage
I
C
= -10 mA, I
B
= -0.5 mA -700
mV
I
C
= -100 mA, I
B
= -5 mA -900
V
BE
(on) Base-Emitter On Voltage
V
CE
= -5 V, I
C
= -2 mA -600 -660 -750
mV
V
CE
= -5 V, I
C
= -10 mA -800
f
T
Current Gain Bandwidth Product
V
CE
= -5 V, I
C
= -10 mA,
f = 10 MHz
150 MHz
C
ob
Output Capacitance V
CB
= -10 V, I
E
= 0, f = 1 MHz 6 pF
NF
Noise
Figure
BC556 / BC557 / BC558
V
CE
= -5 V, I
C
= -200 μA,
f = 1 kHz, R
G
= 2 kΩ
210
dB
BC559 / BC560 1 4
BC559
V
CE
= -5 V, I
C
= -200 μA,
R
G
= 2 kΩ, f = 30 to 15000 MHz
1.2 4.0
BC560 1.2 2.0
Classification A B C
h
FE
110 ~ 220 200 ~ 450 420 ~ 800