Data Sheet

BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage
BC556 -80
VBC557 / BC560 -50
BC558 / BC559 -30
V
CEO
Collector-Emitter Voltage
BC556 -65
VBC557 / BC560 -45
BC558 / BC559 -30
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -100 mA
I
CP
Peak Collector Current (Pulse) -200 mA
I
BP
Peak Base Current (Pulse) -200 mA
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature Range -65 to +150 °C
Symbol Parameter Max. Unit
P
D
Total Power Dissipation 500 mW
Derate Above 25°C4.0mW/°C
R
θJA
Thermal Resistance, Junction-to-Ambient 250 °C/W