Datasheet

BC549C, BC550C
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
45 − −
Vdc
Collector−Base Breakdown Voltage
(I
C
= 10 mAdc, I
E
= 0)
V
(BR)CBO
50 − −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
5.0 − −
Vdc
Collector Cutoff Current
(V
CB
= 30 V, I
E
= 0)
(V
CB
= 30 V, I
E
= 0, T
A
= +125°C)
I
CBO
−
−
−
−
15
5.0
nAdc
mAdc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
− − 15
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
h
FE
100
420
270
500
−
800
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.5 mAdc)
(I
C
= 10 mAdc, I
B
= see note 1)
(I
C
= 100 mAdc, I
B
= 5.0 mAdc, see note 2)
V
CE(sat)
−
−
−
0.075
0.3
0.25
0.25
0.6
0.6
Vdc
Base−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
− 1.1 −
Vdc
Base−Emitter On Voltage
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
V
BE(on)
−
−
0.55
0.52
0.55
0.62
−
−
0.7
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
− 250 −
MHz
Collector−Base Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
cbo
− 2.5 −
pF
Small−Signal Current Gain
(I
C
= 2.0 mAdc, V
CE
= 5.0 V, f = 1.0 kHz)
h
fe
450 600 900
−
Noise Figure
(I
C
= 200 mAdc, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz)
(I
C
= 200 mAdc, V
CE
= 5.0 Vdc, R
S
= 100 kW, f = 1.0 kHz)
NF
1
NF
2
−
−
0.6
−
2.5
10
dB
1. I
B
is value for which I
C
= 11 mA at V
CE
= 1.0 V.
2. Pulse test = 300 ms − Duty cycle = 2%.
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model