Data Sheet

BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. Transfer Characteristic
Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product
0 2 4 6 8 101214161820
0
20
40
60
80
100
I
B
= 50μA
I
B
= 100μA
I
B
= 150μA
I
B
= 200μA
I
B
= 250μA
I
B
= 300μA
I
B
= 350μA
I
B
= 400μA
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
V
CE
= 5V
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
1 10 100 1000
1
10
100
1000
V
CE
= 5V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
10000
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
1 10 100 1000
0.1
1
10
100
f=1MHz
I
E
= 0
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
1
10
100
1000
V
CE
= 5V
f
T
, CURRENT GAIN-BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT